| PART |
Description |
Maker |
| BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| ISL55009 |
MMIC Silicon Bipolar Broadband Amplifier
|
Intersil Corporation
|
| ISL55013 ISL55013IEZ-T7 |
MMIC Silicon Bipolar Broadband Amplifier
|
Intersil Corporation
|
| ISL55011 |
MMIC Silicon Bipolar Broadband Amplifier 单片硅双极宽带放大器
|
Intersil, Corp.
|
| ISL55008IEZ-T7 ISL55008 |
MMIC Silicon Bipolar Broadband Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| BFR92T |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers and fast non-saturated switches
|
Infineon Technologies AG
|
| BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| NTE278 |
Silicon NPN Transistor Broadband RF Amp
|
NTE[NTE Electronics]
|
| RA60H1317M RA60H1317M-101 RA60H1317M11 |
RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
